Semiconductors V. 34, I. 01
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Issue Date
2000-01
Authors
Publisher
MAIK “Nauka/Interperiodica”.
Keywords
Semiconductors
Abstract
Description
Semiconductors -- January 2000
Volume 34, Issue 1, pp. 1-121
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Holmium Redistribution upon Solid-Phase Epitaxial Crystallization of Amorphized Silicon Layers
O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev
pp. 1-5 Full Text: PDF (64 kB)
Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001)
N. V. Vostokov, S. A. Gusev, I. V. Dolgov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, and D. O. Filatov
pp. 6-10 Full Text: PDF (194 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures
E. F. Venger, Yu. G. Sadof'ev, G. N. Semenova, N. E. Korsunskaya, V. P. Klad'ko, M. P. Semtsiv, and L. V. Borkovskaya
pp. 11-16 Full Text: PDF (82 kB)
Evolution of Photoluminescence Spectra of Stoichiometric CdTe: Dependence on the Purity of Starting Components
A. V. Kvit, Yu. V. Klevkov, S. A. Medvedev, V. S. Bagaev, A. V. Perestoronin, and A. F. Plotnikov
pp. 17-20 Full Text: PDF (58 kB)
Formation of Photoluminescence Centers During Annealing of SiO2 Layers Implanted with Ge Ions
G. A. Kachurin, L. Rebohle, I. E. Tyschenko, V. A. Volodin, M. Voelskow, W. Skorupa, and H. Froeb
pp. 21-26 Full Text: PDF (90 kB)
Special Features of Electrical Activation of 28Si in Single-Crystal and Epitaxial GaAs Subjected to Rapid Thermal Annealing
V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov
pp. 27-31 Full Text: PDF (63 kB)
Electrophysical Properties of Hg1–xCdxTe Crystals under Hydrostatic Pressure
I. V. Virt, V. D. Prozorovskii, and D. I. Tsyutsyura
pp. 32-34 Full Text: PDF (49 kB)
Band Structure and Spatial Charge Distribution in AlxGa1–xN
V. G. Deibuk, A. V. Voznyi, and M. M. Sletov
pp. 35-39 Full Text: PDF (178 kB)
Field Dependence of the Rate of Thermal Emission of Holes from the VGaSAs Complex in Gallium Arsenide
S. V. Bulyarskii, N. S. Grushko, and A. V. Zhukov
pp. 40-44 Full Text: PDF (74 kB)
Electron Spin Resonance in the Vicinity of Metal–Insulator Transition in Compensated n-Ge:As
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 45-55 Full Text: PDF (147 kB)
SEMICONDUCTORS STRUCTURES, INTERFACES, AND SURFACES
Ellipsometric Study of Ultrathin AlxGa1–xAs Layers
M. V. Sukhorukova, I. A. Skorokhodova, and V. P. Khvostikov
pp. 56-60 Full Text: PDF (82 kB)
Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering
V. A. Volodin, M. D. Efremov, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Bolotov, and V. A. Sachkov
pp. 61-66 Full Text: PDF (87 kB)
Dynamic Strain-Sensitive Characteristics of the Schottky-Barrier Diodes under a Pulsed Uniform Pressure
O. O. Mamatkarimov, S. Z. Zainabidinov, A. Abduraimov, R. Kh. Khamidov, and U. A. Tuichiev
pp. 67-69 Full Text: PDF (49 kB)
Effect of the Insulator–Gallium Arsenide Boundary on the Behavior of Silicon in the Course of Radiation Annealing
V. M. Ardyshev, M. V. Ardyshev, and S. S. Khludkov
pp. 70-72 Full Text: PDF (48 kB)
Temperature Dependence of Residual Stress in Epitaxial GaAs/Si(100) Films Determined from Photoreflectance Spectroscopy Data
R. V. Kuz'menko, A. V. Ganzha, O. V. Bochurova, É. P. Domashevskaya, J. Schreiber, S. Hildebrandt, S. Mo, E. Peiner, and A. Schlachetzki
pp. 73-80 Full Text: PDF (102 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Energy Distribution of Localized States in Amorphous Hydrogenated Silicon
K. V. Kougiya, E. I. Terukov, and I. N. Trapeznikova
pp. 81-86 Full Text: PDF (79 kB)
Modifications of the Structure and Electrical Parameters of the Films of Amorphous Hydrogenated Silicon Implanted with Si+ Ions
O. A. Golikova, A. N. Kuznetsov, V. Kh. Kudoyarova, I. N. Petrov, É. P. Domashevskaya, and V. A. Terekhov
pp. 87-91 Full Text: PDF (68 kB)
The Influence of Local Surroundings of Er Atoms on the Kinetics of Decay of Er Photoluminescence in Amorphous Hydrogenated Silicon
E. I. Terukov, V. Kh. Kudoyarova, O. I. Kon'kov, E. A. Konstantinova, B. V. Kamenev, and V. Yu. Timoshenko
pp. 92-94 Full Text: PDF (48 kB)
Crystal–Glass Phase Transition Induced by Pulses of Electric Field in Chalcogenide Semiconductors
É. A. Lebedev, K. D. Tséndin, and L. P. Kazakova
pp. 95-97 Full Text: PDF (40 kB)
Growth of a-C:H and a-C:H Films Produced by Magnetron Sputtering
T. K. Zvonareva, V. I. Ivanov-Omskii, A. V. Nashchekin, and L. V. Sharonova
pp. 98-103 Full Text: PDF (330 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Light Emitting Diodes for the Spectral Range of lambda = 3.3–4.3µm Fabricated from the InGaAs- and InAsSbP-Based Solid Solutions: Electroluminescence in the Temperature Range of 20–180°C
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 104-107 Full Text: PDF (74 kB)
Current Transport in the Me–n–n+ Schottky–Barrier Structures
N. A. Torkhov and S. V. Eremeev
pp. 108-114 Full Text: PDF (100 kB)
Capacitance Measurements for Diodes in the Case of Strong Dependence of the Diode-Base Series Resistance on the Applied Voltage
A. A. Lebedev, Jr, A. A. Lebedev[dagger], and D. V. Davydov
pp. 115-118 Full Text: PDF (66 kB)
A Spatially Single-Mode Laser for a Range of 1.25–1.28µm on the Basis of InAs Quantum Dots on a GaAs Substrate
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov
pp. 119-121 Full Text: PDF (55 kB)