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dc.date.accessioned2007-06-11T19:35:48Z
dc.date.available2007-06-11T19:35:48Z
dc.date.issued1999-11
dc.identifier.urihttp://hdl.handle.net/1951/41408
dc.descriptionSemiconductors -- November 1999 Volume 33, Issue 11, pp. 1157-1264 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Spatially inhomogeneous oxygen precipitation in silicon S. V. Bulyarskii, V. V. Svetukhin, and O. V. Prikhod'ko Full Text: PDF (73 kB) Enhanced formation of thermal donors in irradiated germanium: local vibrational mode spectroscopy A. A. Klechko, V. V. Litvinov, V. P. Markevich, and L. I. Murin Full Text: PDF (39 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Radiation defects in semiconductors under hydrostatic pressure V.N. Brudnyi Full Text: PDF (70 kB) Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko Full Text: PDF (79 kB) The electron density of semiconductors with charged dislocations placed in external fields Z. A. Veliev Full Text: PDF (45 kB) Activation of impurities in ZnSe crystals, stimulated by a laser shock wave A. Baidullaeva, A. I. Vlasenko, B. L. Gorkovenko, and P. E. Mozol' Full Text: PDF (49 kB) Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures A. V. Subashiev, Yu. A. Mamaev, B. D. Oskotskii, Yu. P. Yashin, and V. K. Kalevich Full Text: PDF (89 kB) Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC V. S. Ballandovich Full Text: PDF (71 kB) Physical properties of CdGeAs2 crystals grown by solid-state synthesis V. Yu. Rud', Yu. V. Rud', and T. N. Ushakova Full Text: PDF (32 kB) Change in the energy of Jahn–Teller configurations of vacancy–donor complexes induced by uniaxial strain N. S. Averkiev, A. A. Gutkin, and M. A. Reshchikov Full Text: PDF (77 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures E. F. Venger, É. B. Kaganovich, S. I. Kirillova, É. G. Manoilov, V. E. Primachenko, and S. V. Svechnikov Full Text: PDF (51 kB) Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers K. V. Vasilevskii, S. V. Rendakova, I. P. Nikitina, A. I. Babanin, A. N. Andreev, and K. Zekentes Full Text: PDF (84 kB) Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si / SiO2 interface N. I. Bochkareva and S. A. Khorev Full Text: PDF (59 kB) Statistical delay of microplasma breakdown in GaP p–n junctions S. V. Bulyarskii, Yu. N. Serëzhkin, and V. K. Ionychev Full Text: PDF (66 kB) LOW-DIMENSIONAL SYSTEMS On the transformation of the potential barrier at a GaAs/Au interface during heat treatment B. I. Bednyi Full Text: PDF (52 kB) Absorption of a strong electromagnetic wave by electrons in a superlattice in a quantizing electric field D. V. Zav'yalov and S. V. Kryuchkov Full Text: PDF (57 kB) X-Ray diffraction analysis of multilayer InAs–GaAs heterostructures with InAs quantum dots N. N. Faleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, K. M. Pavlov, V. I. Punegov, M. Tabuchi, and Y. Takeda Full Text: PDF (536 kB) Quantum Hall effect in a single-mode wire Z. D. Kvon, E. B. Ol'shanestkii, M. I. Katkov, A. E. Plotnikov, A. I. Toropov, N. T. Moshegov, M. Casse, and J. C. Portal Full Text: PDF (38 kB) Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices D. G. Kipshidze, H. P. Schenk, A. Fissel, U. Kaiser, J. Schulze, Wo. Richter, M. Weihnacht, R. Kunze, and J. Kräusslich Full Text: PDF (557 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water B. R. Dzhumaev Full Text: PDF (58 kB) Conductivity and absorption edge of amorphous silicyne A. I. Mashin and A. F. Khokhlov Full Text: PDF (222 kB) PHYSICS OF SEMICONDUCTOR DEVICES Classification of single-electron devices I. I. Abramov and E. G. Novik Full Text: PDF (104 kB) Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states A. E. Zhukov, A. R. Kovsh, and V. M. Ustinov Full Text: PDF (73 kB)en
dc.format.extent2533371 bytes
dc.format.extent6258 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 33en
dc.relation.ispartofseriesI. 11en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 33, I. 11en


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