Description
Semiconductors -- September 1999
Volume 33, Issue 9, pp. 933-1047
Eightieth anniversary of the Ioffe Institute
B. B. D'yakov
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Silicon-germanium—a promise into the future?
H. G. Grimmeiss
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SEMICONDUCTOR HETEROSTRUCTURES
Heterostructure solar cells
V. M. Andreev
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Quantum dot lasers: the birth and future trends
N. N. Ledentsov
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Quantum dots: Paradigm changes in semiconductor physics
D. Bimberg
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Electrons and phonons in quantum wells
J. Pozela, A. Namajunas, K. Pozela, and V. Juciene
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Physics and technologies of superhigh-efficiency tandem solar cells
M. Yamaguchi
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Growth of III–N materials and devices by metalorganic chemical vapor deposition
R. D. Dupuis, P. A. Grudowski, C. J. Eiting, J. Park, and C. J. Eiting
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High density 2DEG in III–V semiconductor heterostructures and high-electron-mobility transistors based on them
V. G. Mokerov, Yu. V. Fedorov, and A. V. Hook
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Heteroepitaxial growth of InAs on Si: a new type of quantum dot
G. E. Cyrlin, V. N. Petrov, V. G. Dubrovskii, Yu. B. Samsonenko, N. K. Polyakov, A. O. Golubok, S. A. Masalov, N. I. Komyak, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, Zh. I. Alferov, and D. Bimberg
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High-efficiency AlGaAs/GaAs concentrator (2500 suns) solar cells
V. M. Andreev, V. P. Khvostikov, V. R. Larionov, V. D. Rumyantsev, E. V. Paleeva, and M. Z. Shvarts
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Parabolic negative magnetoresistance in p-Ge/Ge1 – xSix heterostructures
Yu. G. Arapov, G. I. Harus, V. N. Neverov, N. G. Shelushinina, and O. A. Kuznetsov
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Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers
L. V. Asryan and R. A. Suris
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Polarization anisotropy in optical reflection spectra of structures with open nanowires
N. S. Averkiev, S. O. Kognovitskii, and V. V. Travnikov
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Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
G. V. Astakhov, V. P. Kochereshko, D. G. Vasil'ev, V. P. Evtikhiev, V. E. Tokranov, I. V. Kudryashov, and G. V. Mikhailov
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Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Giant linear polarization of photoluminescence in type-II ZnSe/BeTe superlattices
A. V. Platonov, V. P. Kochereshko, G. V. Mikhailov, D. R. Yakovlev, W. Ossau, A. Waag, and G. Landwehr
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Wide-gap semiconductors for high-power electronics
A. A. Lebedev and V. E. Chelnokov
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Effect of local vibrations on the H and D atom densities at a Si surface
I. P. Ipatova, O. P. Chikalova-Luzina, and K. Hess
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Irradiation as a possible method for producing SiC heterostructures
A. A. Lebedev
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InGaAs/InP heterostructures with strained quantum wells and quantum dots (lambda = 1.5 – 1.9 µm)
Z. N. Sokolova, D. A. Vinokurov, I. S. Tarasov, N. A. Gun'ko, and G. G. Zegrya
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Spontaneously assembling periodic composition-modulated InGaAsP structures
L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, I. S. Tarasov, I. P. Ipatova, V. A. Shchukin, N. A. Bert, and A. A. Sitnikova
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Gain characteristics of quantum-dot injection lasers
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, N. N. Ledentsov, A. F. Tsatsul'nikov, M. V. Maksimov, S. V. Zaitsev, Yu. M. Shernyakov, A. V. Lunev, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg
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Blue-green ZnSe lasers with a new type of active region
S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, A. Waag, H. J. Lugauer, G. Reuscher, M. Keim, F. F. Fischer, and G. Landwehr
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Optical spectra of wide band gap BexZn1 – xSe alloys
A. M. Mintairov, S. Raymond, J. L. Merz, F. C. Peiris, S. Lee, U. Bindley, J. K. Furdyna, A. M. Mintairov, V. G. Melehin, and K. Sadchikov
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Excitonic molecules trapped by quantum dots and isoelectronic impurities in many-valley semiconductors
A. A. Rogachev
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High-frequency current instabilities in a silicon Auger transistor
E. V. Ostroumova and A. A. Rogachev
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Application of superfast (102 – 103 °C/s) cooling of a solution–melt in the liquid-phase epitaxy of semiconductors
A. V. Abramov, N. G. Deryagin, and D. N. Tret'yakov
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GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution–melts
V. I. Vasil'ev, D. Akhmedov, A. G. Geryagin, V. I. Kuchinskii, I. P. Nikitina, V. M. Smirnov, and D. N. Tret'yakov
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Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning
G. A. Medvedkin, L. Stolt, and J. Wennerberg
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Conductance of a quantum wire in a parallel magnetic field
V. A. Geiler and V. A. Margulis
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Quantization of magnetic induction in a 2D system under conditions of the quantum Hall effect
G. G. Zegrya
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OBITUARY
In memory of Aleksandr Aleksandrovich Lebedev
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