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dc.date.accessioned2007-06-11T19:28:53Z
dc.date.available2007-06-11T19:28:53Z
dc.date.issued1999-07
dc.identifier.urihttp://hdl.handle.net/1951/41403
dc.descriptionSemiconductors -- July 1999 Volume 33, Issue 7, pp. 707-819 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Influence of native defects on polytypism in SiC A. A. Lebedev Full Text: PDF (34 kB) Antistructural defects in PbTe-type semiconductors V. F. Masterov, S. I. Bondarevskii, F. S. Nasredinov, N. P. Seregin, and P. P. Seregin Full Text: PDF (40 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Electrical properties of nuclear-doped indium antimonide N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev Full Text: PDF (50 kB) Study of the polarization photoluminescence of thick epitaxial GaN layers Yu. V. Zhilyaev, V. V. Krivolapchuk, and I. N. Safronov Full Text: PDF (44 kB) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it T. I. Voronina, T. S. Lagunova, K. D. Moiseev, A. E. Rozov, M. A. Sipovskaya, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (79 kB) Hubbard energy of two-electron tin centers in PbS1 – zTez solid solutions V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, and N. P. Seregin Full Text: PDF (35 kB) Investigation of MOVPE-grown GaN layers doped with As atoms A. F. Tsatsul'nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, V. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alfërov, and A. Hoffmann Full Text: PDF (46 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Photolectric effects in silicon switching structures utilizing rare-earth fluorides V. A. Rozhkov and M. B. Shalimova Full Text: PDF (66 kB) Fabrication and properties of In2O3/CdS/CuInSe2 heterostructures V. Yu. Rud' and Yu. V. Rud' Full Text: PDF (57 kB) Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions I. V. Bodnar', V. F. Gremenok, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (54 kB) Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer V. I. Kozlovskii,, A. B. Krysa, Yu. G. Sadof'ev, and A. G. Tur'yanskii Full Text: PDF (236 kB) Distribution of the electric field in high-resistivity MSM structures illuminated by nonmonochromatic light B. I. Reznikov Full Text: PDF (102 kB) Heterojunctions utilizing CuInxGa1 – xTe2 thin films V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. F. Gremenok, I. A. Viktorov, I. V. Bodnar', and D. D. Krivolap Full Text: PDF (48 kB) LOW-DIMENSIONAL SYSTEMS Intraband light absorption in quasi-two-dimensional systems in external electric and magnetic fields É. P. Sinyavskii and S. M. Sokovnich Full Text: PDF (65 kB) Polar state of a particle with a degenerate band spectrum in a quantum dot I. P. Ipatova, A. Yu. Maslov, and O. V. Proshina Full Text: PDF (85 kB) Transport and optical properties of tin delta-doped GaAs structures V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, V. G. Mokerov, A. P. Senichkin, A. S. Bugaev, A. L. Karuzskii, A. V. Perestoronin, R. T. F. van Schaijk, and A. de Visser Full Text: PDF (118 kB) Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures A. M. Georgievskii, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, L. Ya. Karachinskii, I. I. Novikov, and P. S. Kop'ev Full Text: PDF (47 kB) Electron-beam-induced conductivity in self-organized silicon quantum wells A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin, and A. M. Malyarenko Full Text: PDF (105 kB) Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov, D. A. Livshits, Z. N. Sokolova, I. S. Tarasov, and Zh. I. Alferov Full Text: PDF (225 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Photocapacitance relaxation in amorphous As2Se3 films I. A. Vasiliev and S. D. Shutov Full Text: PDF (53 kB) Controlling the U–-center density in Se–As chalcogenide-glass semiconductors by doping with metals and halogens L. P. Kazakova and K. D. Tsendin Full Text: PDF (55 kB) PHYSICS OF SEMICONDUCTOR DEVICES Theory of photoresistors based on trapezoidal delta-doped superlattices V. V. Osipov, A. Yu. Selyakov, and M. Foygel Full Text: PDF (81 kB) A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p – n structures and Schottky diodes Yu. A. Goldberg, O. V. Konstantinov, V. M. Lantratov, O. I. Obolensky, T. V. Petelina, E. A. Posse, and M. Z. Shvarts Full Text: PDF (55 kB) Fabrication of discrete p – n junctions separated by an insulating layer using direct wafer bonding E. G. Guk, B. G. Podlaskin, N. A. Tokranova, V. B. Voronkov, and V. A. Kozlov Full Text: PDF (141 kB) Polarization selection in VCSELs due to current carrier heating B. S. Ryvkin and A. M. Georgievskii Full Text: PDF (116 kB)en
dc.format.extent1893913 bytes
dc.format.extent7125 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 33en
dc.relation.ispartofseriesI. 07en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 33, I. 07en


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