Description
Semiconductors -- May 1999
Volume 33, Issue 5, pp. 483-593
REVIEW
Induced photopleochroism in semiconductors Review
F. P. Kesamanly, V. Yu. Rud', and Yu. V. Rud'
Full Text: PDF (434 kB)
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects
M. Yu. Barabanenkov, A. V. Leonov, V. N. Mordkovich, and N. M. Omel'yanovskaya
Full Text: PDF (79 kB)
Effect of the irradiation intensity on the efficiency of the production radiation defects in n- and p-type Si crystals
T. A. Pagava and Z. V. Basheleishvili
Full Text: PDF (42 kB)
Spontaneously forming periodic composition-modulated InGaAsP structures
N. A. Bert, L. S. Vavilova, I. P. Ipatova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, A. A. Sitnikova, I. S. Tarasov, and V. A. Shchukin
Full Text: PDF (432 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Absorption of infrared radiation by free charge carriers in n-type Cd1–xZnxTe
A. I. Belogorokhov, A. G. Belov, V. M. Lakeenkov, N. A. Smirnova, and L. I. Belogorokhova
Full Text: PDF (71 kB)
Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
G. A. Il'chuk, N. A. Ukrainets, V. I. Ivanov-Omskii, Yu. V. Rud', and V. Yu. Rud'
Full Text: PDF (123 kB)
Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions
I. E. Tyschenko, V. A. Volodin, L. Rebohle, M. Voelskov, and V. Skorupa
Full Text: PDF (139 kB)
Slow photoconductivity relaxation due to radiation defects in p-type Si
S. E. Mal'khanov
Full Text: PDF (44 kB)
Dependence of the properties of Cd1 – xZnxTe crystals on the type of intrinsic point defect formed by oxygen
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, V. K. Komar, V. G. Galstan, and V. S. Zimogorskii
Full Text: PDF (124 kB)
Low-temperature anomalies exhibited by the photoelectromagnetic effect in p-type CdxHg1–xTe
S. G. Gasan-zade, M. V. Strikha, and G. A. Shepelskii
Full Text: PDF (111 kB)
The effect of fields due to charge centers at random locations in a semiconductor crystal on the electronic structure of neutral acceptors and on the polarization of luminescence generated by -acceptor transitions
E. B. Osipov, O. V. Voronov, N. O. Sorokina, and B. V. Borisov
Full Text: PDF (89 kB)
The effect of intense laser light on the absorption-edge region of the spectrum of a CdCr2Se4 ferromagnetic semiconductor
L. L. Golik and Z. É. Kun'kova
Full Text: PDF (76 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Saturated vertical drift velocity of electrons in silicon carbide polytypes
V. I. Sankin and A. A. Lepneva
Full Text: PDF (74 kB)
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts
A. A. Verevkin, N. G. Ptitsina, K. V. Smirnov, B. M. Voronov, G. N. Gol'tsman, E. M. Gershenson, and K. S. Yngvesson
Full Text: PDF (78 kB)
Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers
A. V. Ankudinov, V. P. Evtikhiev, V. E. Tokranov, V. P. Ulin, and A. N. Titkov
Full Text: PDF (657 kB)
LOW-DIMENSIONAL SYSTEMS
Spectrum and electron-phonon interaction in a medium with a cylindrical quantum wire
N. V. Tkach and V. P. Zharkoi
Full Text: PDF (117 kB)
Electron and hole spectra in a superlattice of cylindrical quantum wires
V. M. Golovach, G. G. Zegrya, A. M. Makhanets, I. V. Pronishin, and N. V. Tkach
Full Text: PDF (123 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Vibrational spectra of erbium- and copper-modified hydrogenated amorphous carbon
V. I. Ivanov-Omskii, A. A. Andreev, and G. S. Frolova
Full Text: PDF (74 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity
D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskii
Full Text: PDF (83 kB)
D'yakonov–Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel
M. V. Cheremisin and G. G. Samsonidze
Full Text: PDF (165 kB)
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, V. M. Ustinov, I. L. Krestnikov, A. V. Lunev, A. V. Sakharov, B. V. Volovik, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alfërov, and D. Bimberg
Full Text: PDF (90 kB)
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry
V. P. Evtikhiev, E. Yu. Kotel'nikov, I. V. Kudryashov, V. E. Tokranov, and N. N. Faleev
Full Text: PDF (191 kB)
