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dc.date.accessioned2007-06-11T19:24:27Z
dc.date.available2007-06-11T19:24:27Z
dc.date.issued1999-04
dc.identifier.urihttp://hdl.handle.net/1951/41400
dc.descriptionSemiconductors -- April 1999 Volume 33, Issue 4, pp. 377-481 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Low-temperature relaxation of a solid solution of iron in gallium phosphide E. S. Demidov, V. V. Karzanov, A. B. Gromoglasova, and O. N. Morozkin Full Text: PDF (74 kB) Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms A. F. Leier, L. N. Safronov, and G. A. Kachurin Full Text: PDF (126 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Optical spectra and electronic structure of indium nitride V. V. Sobolev and M. A. Zlobina Full Text: PDF (104 kB) Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon N. A. Poklonskii and A. I. Syaglo Full Text: PDF (99 kB) The influence of defect clusters on redistribution of doping impurities in n- and p-type Si0.7Ge0.3 irradiated by reactor neutrons A. P. Dolgolenko Full Text: PDF (86 kB) Acoustostimulated activation of bound defects in CdHgTe alloys A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina Full Text: PDF (100 kB) A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation N. A. Poklonskii, A. I. Syaglo, and G. Biskupski Full Text: PDF (140 kB) Low-temperature photoluminescence in holmium-doped silicon B. A. Andreev, N. A. Sobolev, Yu. A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, and E. O. Parshin Full Text: PDF (61 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Generation-recombination instabilities in thin-film structures V. V. Kolobaev Full Text: PDF (52 kB) Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud', and V. Yu. Rud' Full Text: PDF (99 kB) Surface of n-type InP (100) passivated in sulfide solutions V. N. Bessolov, M. V. Lebedev, and D. R. T. Zahn Full Text: PDF (108 kB) Electrical and photoelectric characteristics of an isotypic n-ZnO–n-Si structure S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu Full Text: PDF (77 kB) LOW-DIMENSIONAL SYSTEMS Analysis of mechanisms for electron scattering in GaAs/AlxGa1 – xAs superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures S. I. Borisenko and G. F. Karavaev Full Text: PDF (149 kB) Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells V. E. Kudryashov, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin Full Text: PDF (138 kB) Photoionization of deep impurity centers in quantum well structures V. I. Belyavskii and Yu. A. Pomerantsev Full Text: PDF (123 kB) Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity B. A. Aronzon, V. V. Rylkov, L. Asadauskas, R. Brazis, D. Yu. Kovalev, and J. Leotin Full Text: PDF (163 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Defects in a-Si:H films induced by Si ion implantation O. A. Golikova Full Text: PDF (92 kB) Absorption and the optical gap of a-C:H films produced from acetylene plasmas E. A. Konshina Full Text: PDF (105 kB) Conductivity relaxation in coated porous silicon after annealing S. P. Zimin and A. N. Bragin Full Text: PDF (68 kB) PHYSICS OF SEMICONDUCTOR DEVICES Photomemory in CdTe thin-film solar cells É. N. Voronkov, A. E. Sharonov, and V. V. Kolobaev Full Text: PDF (64 kB) Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells V. Yu. Rud', Yu. V. Rud', and H. W. Schock Full Text: PDF (92 kB) Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alfërov, I. É. Kozin, M. V. Belousov, and D. Bimberg Full Text: PDF (76 kB) Influence of deep traps on current transport in Pd–p(n)–CdTe structures S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu Full Text: PDF (57 kB) Determination of the parameters of deep levels from the relaxational delay of breakdown of a p–n junction S. V. Bulyarskii, Yu. N. Serëzhkin, and V. K. Ionychev Full Text: PDF (86 kB) Effect of laser radiation on GaP epitaxial diode structures V. V. Inyakov, E. N. Moos, and Yu. A. Shrainer Full Text: PDF (50 kB) PERSONALIA Vitali[i-breve] Ivanovich Stafeev (on his 70th birthday) Full Text: PDF (176 kB) Aleksandr Aleksandrovich Lebedev (on his 70th birthday) Full Text: PDF (124 kB)en
dc.format.extent2277452 bytes
dc.format.extent6950 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 33en
dc.relation.ispartofseriesI. 04en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 33, I. 04en


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