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dc.date.accessioned2007-06-11T19:22:14Z
dc.date.available2007-06-11T19:22:14Z
dc.date.issued1999-03
dc.identifier.urihttp://hdl.handle.net/1951/41399
dc.descriptionSemiconductors -- March 1999 Volume 33, Issue 3, pp. 265-372 REVIEW Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review E. G. Guk, A. V. Kamanin, N. M. Shmidt, V. B. Shuman, and T. A. Yurre Full Text: PDF (175 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Dielectric properties of the semiconducting compounds Cd1–xFexTe P. V. Zukowski, J. Partyka, P. Wegierek, J. W. Sidorenko, J. A. Szostak, and A. Rodzik Full Text: PDF (56 kB) Current-illumination characteristics of CdHgTe crystals with photoactive inclusions A. I. Vlasenko and Z. K. Vlasenko Full Text: PDF (95 kB) Temperature dependences of the photoconducitivty of CdHgTe crystals with photoactive inclusions A. I. Vlasenko and Z. K. Vlasenko Full Text: PDF (117 kB) Raman scattering spectroscopy of Zn1 – xCdxSe films grown on GaAs substrates by molecular-beam epitaxy L. K. Vodop'yanov, N. N. Mel'nik, and Yu. G. Sadof'ev Full Text: PDF (59 kB) Optical and photoelectric properties of Zn1 – xFexTe crystals Yu. P. Gnatenko, I. A. Farina, and R. V. Gamernyk Full Text: PDF (83 kB) Calculating the band structure of InSb1 – xBix solid solutions V. G. Deibuk, Ya. I. Viklyuk, and I. M. Rarenko Full Text: PDF (108 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Effective charge carrier lifetime in CdHgTe variable-gap structures V. M. Osadchii, A. O. Suslyakov, V. V. Vasil'ev, and S. A. Dvoretsky Full Text: PDF (84 kB) Polarization photosensitivity of GaN/Si heterojunctions V. M. Botnaruk, S. D. Raevsky, V. V. Belkov, Yu. V. Zhilyaev, Yu. V. Rud, L. M. Fedorov, and V. Yu. Rud Full Text: PDF (103 kB) Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures I. Ya. Gerlovin, Yu. K. Dolgikh, S. A. Eliseev, Yu. P. Efimov, I. A. Nodokus, V. V. Ovsyankin, V. V. Petrov, and B. Ya. Ber Full Text: PDF (58 kB) Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures E. I. Goldman, A. G. Zhdan, and N. F. Kukharskaya Full Text: PDF (120 kB) LOW-DIMENSIONAL SYSTEMS Selective doping in hydride epitaxy and the electrical properties of quantum-well Ge/GeSi:B heterostructures L. K. Orlov, R. A. Rubtsova, and N. L. Orlova Full Text: PDF (94 kB) Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, A. V. Golikov, I. G. Malkina, B. N. Zvonkov, and Yu. N. Saf'yanov Full Text: PDF (124 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Comparative study of the optical properties of porous silicon and the oxides SiO and SiO2 A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe Full Text: PDF (72 kB) Photosensitive structures based on porous silicon É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov Full Text: PDF (84 kB) Photoconductivity of amorphous hydrated silicon doped by ion implantation A. G. Kazanskii, N. V. Ryzhkova, and S. M. Pietruszko Full Text: PDF (74 kB) Electronic properties and structure of a-Si : H films with higher photosensitivity O. A. Golikova and M. M. Kazanin Full Text: PDF (73 kB) PHYSICS OF SEMICONDUCTOR DEVICES Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them S. V. Slobodchikov, D. N. Goryachev, Kh. M. Salikhov, and O. M. Sreseli Full Text: PDF (95 kB) Temperature dependence of the quantum efficiency of silicon p – n photodiodes Yu. A. Goldberg, V. V. Zabrodsky, O. I. Obolensky, T. V. Petelina, and V. L. Suhanov Full Text: PDF (51 kB) Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Volkov, and M. F. Kokorev Full Text: PDF (87 kB) Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions G. G. Zegrya, M. P. Mikhailova, T. N. Danilova, A. N. Imenkov, K. D. Moiseev, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (107 kB) Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure B. E. Zhurtanov, K. D. Moiseev, M. P. Mikhailova, T. I. Voronina, N. D. Stoyanov, and Yu. P. Yakovlev Full Text: PDF (104 kB) Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors E. V. Astrova, V. B. Voronkov, A. A. Lebedev, A. N. Lodygin, and A. D. Remenyuk Full Text: PDF (144 kB) Vertical double-collector, strain-sensitive transistor with accelerating electric fields in the base and in the emitter G. G. Babichev, S. I. Kozlovskii, and V. A. Romanov Full Text: PDF (151 kB)en
dc.format.extent1945062 bytes
dc.format.extent6876 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 33en
dc.relation.ispartofseriesI. 03en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 33, I. 03en


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