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dc.date.accessioned2007-06-11T19:05:51Z
dc.date.available2007-06-11T19:05:51Z
dc.date.issued1998-12
dc.identifier.urihttp://hdl.handle.net/1951/41395
dc.descriptionSemiconductors -- December 1998 Volume 32, Issue 12, pp. 1257-1330 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb1 – xSnxSe alloys E. P. Skipetrov, B. B. Kovalev, L. A. Skipetrova, and E. A. Zvereva Full Text: PDF (109 kB) Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon V. V. Artamanov, M. Ya. Valakh, N. I. Klyui, V. P. Mel'nik, A. B. Romanyuk, B. N. Romanyuk, and V. A. Yukhimchuk Full Text: PDF (96 kB) Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon O. V. Aleksandrov, Yu. A. Nikolaev, and N. A. Sobolev Full Text: PDF (90 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Density-of-states anomaly and tunneling conductance of Au/p-GaAs0.94Sb0.06 contacts near the metal–insulator transition T. Yu. Allen, Kh. G. Nazhmudinov, and T. A. Polyanskaya Full Text: PDF (161 kB) Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivity n-Si N. I. Bochkareva and A. V. Klochkov Full Text: PDF (166 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Macroscopic ion traps at the silicon-oxide interface S. G. Dmitriev and Yu. V. Markin Full Text: PDF (124 kB) Manifestations of the deneutralization of mobile charges in SiO2 in the spectroscopy of the silicon-oxide interface S. G. Dmitriev and Yu. V. Markin Full Text: PDF (86 kB) LOW-DIMENSIONAL SYSTEMS Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4 plasma followed by low-temperature annealing K. S. Zhuravlev, A. L. Sokolov, and K. P. Mogil'nikov Full Text: PDF (104 kB) Weak localization and intersubband transitions in delta-doped GaAs G. M. Min'kov, S. A. Negashev, O. É. Rut, A. V. Germanenko, V. V. Valyaev, and V. L. Gurtovoi Full Text: PDF (103 kB) Quantum corrections to the conductivity of a two-dimensional system with antidots M. M. Makhmudian and M. V. Éntin Full Text: PDF (119 kB) PHYSICS OF SEMICONDUCTOR DEVICES Transient processes in photocathodes at high laser intensities B. I. Reznikov and A. V. Subashiev Full Text: PDF (180 kB) Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions N. M. Volodin, A. V. Khanova, P. S. Smertenko, and L. L. Fedorenko Full Text: PDF (127 kB) Continuous stimulated emission at T = 293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region V. P. Evtikhiev, I. V. Kudryashov, E. Yu. Kotel'nikov, V. E. Tokranov, A. N. Titkov, I. S. Tarasov, and Zh. I. Alferov Full Text: PDF (517 kB) PERSONALIA Solomon Meerovich Ryvkin (On his 80th Birthday) Full Text: PDF (209 kB) ERRATA Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)] I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev Full Text: PDF (19 kB)en
dc.format.extent1946138 bytes
dc.format.extent4693 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 32en
dc.relation.ispartofseriesI. 12en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 32, I. 12en


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