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dc.descriptionSemiconductors -- October 1998 Volume 32, Issue 10, pp. 1029-1140 ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Activation and distribution of silicon implanted in gallium arsenide as a result of isothermal radiation annealing V. M. Ardyshev and M. V. Ardyshev Full Text: PDF (84 kB) Equilibrium of native point defects in tin dioxide K. P. Bogdanov, D. Ts. Dimitrov, O. F. Lutskaya, and Yu. M. Tairov Full Text: PDF (76 kB) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret'yakov, and P. Werner Full Text: PDF (740 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Photoconductivity of copper-compensated gallium phosphide N. N. Pribylov, S. I. Rembeza, A. I. Spirin, V. A. Buslov, and S. A. Sushkov Full Text: PDF (94 kB) Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin Full Text: PDF (297 kB) Study of GaN thin layers subjected to high-temperature rapid thermal annealing N.I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon Full Text: PDF (83 kB) Nitrogen divacancies — the possible cause of the "yellow band" in the luminescence spectra of GaN A. É. Yunovich Full Text: PDF (60 kB) A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy K. S. Zhuravlev, T. S. Shamirzaev, N. A. Yakusheva, and I. P. Petrenko Full Text: PDF (104 kB) Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1 – z)0.95Ge0.05Te S. A. Nemov, V. I. Proshin, and S. M. Nakhmanson Full Text: PDF (74 kB) Differential methods for determination of deep-level parameters from recombination currents of p–n junctions S. V. Bulyarskii, N. S. Grushko, and A. V. Lakalin Full Text: PDF (109 kB) Experimental corrections for the hot hole distribution function in germanium in crossed electric and magnetic fields V. N. Tulupenko Full Text: PDF (90 kB) Influence of nonuniform spatial distribution of nonequilibrium carriers on the edge emission spectra of direct-gap semiconductors P. G. Lukashevich Full Text: PDF (60 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment V. F. Agekyan, V. I. Ivanov-Omskii, V. N. Knyazevskii, Yu. V. Rud', and V. Yu. Rud' Full Text: PDF (46 kB) Photoelectric properties of GaN/GaP heterostructures V. M. Botnaryuk, S. D. Raevskii, V. V. Bel'kov, Yu. V. Zhilyaev, Yu. V. Rud', L. M. Fedorov, and V. Yu. Rud' Full Text: PDF (79 kB) Photoluminescence of the space charge region of metal–zinc selenide contacts V. P. Makhnii and M. M. Sletov Full Text: PDF (57 kB) The nature of the deep levels responsible for photoelectric memory in GaAs/AlGaAs multilayer quantum-well structures V. N. Ovsyuk, M. A. Dem'yanenko, V. V. Shashkin, and A. I. Toropov Full Text: PDF (113 kB) LOW-DIMENSIONAL SYSTEMS Weak localization in p-type quantum wells N. S. Averkiev, L. E. Golub, and G. E. Pikus Full Text: PDF (238 kB) Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots P. N. Brunkov, A. A. Suvorova, N. A. Bert, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, S. G. Konnikov, L. Eaves, and P. S. Main Full Text: PDF (297 kB) Electron-hole Coulomb interaction in InGaN quantum dots V. E. Bugrov and O. V. Konstantinov Full Text: PDF (119 kB) Shallow acceptors in strained multiquantum-well Ge/Ge1 – xSix heterostructures V. Ya. Aleshkin, V. I. Gavrilenko, I. V. Erofeeva, D. V. Kozlov, M. D. Moldavskaya, and O. A. Kuznetsov Full Text: PDF (119 kB) Potential difference and photovoltaic effect arising from distortion of the electron wave function in a GaAs quantum well with a thin AlGaAs barrier Yu. Pozhela and K. Pozhela Full Text: PDF (114 kB) Effect of partial ordering of a two-dimensional system of scatterers on the anisotropy of its kinetic coefficients N. S. Averkiev, A. M. Monakhov, A. Yu. Shik, and P. M. Koenraad Full Text: PDF (86 kB) Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy V. Ya. Aleshkin, B. N. Zvonkov, I. G. Malkina, Yu. N. Saf'yanov, A. L. Chernov, and D. O. Filatov Full Text: PDF (94 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Doping and impurity compensation by ion implantation in a-SiGe films A. V. Ershov, A. I. Mashin, and A. F. Khokhlov Full Text: PDF (76 kB) Long-term structural relaxation and photoinduced degradation in a-Si : H K. V. Kougia and A. B. Pevtsov Full Text: PDF (63 kB) Heterogeneity and photoconductivity kinetics in amorphous hydrogenated silicon K. V. Kougia, E. I. Terukov, and V. Fus Full Text: PDF (55 kB) Relaxation of photoinduced metastable states in a-Si:H films deposited at high temperatures I. A. Kurova, N. N. Ormont, O. A. Golikova, and M. M. Kazanin Full Text: PDF (61 kB) PHYSICS OF SEMICONDUCTOR DEVICES Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers S. V. Ivanov, A. A. Toropov, S. V. Sorokin, T. V. Shubina, N. D. Il'inskaya, A. V. Lebedev, I. V. Sedova, P. S. Kop'ev, Zh. I. Alferov, H.-J. Lugauer, G. Reuscher, M. Keim, F. Fischer, A. Waag, and G. Landwehr Full Text: PDF (227 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 32en
dc.relation.ispartofseriesI. 10en
dc.titleSemiconductors V. 32, I. 10en

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