| dc.description | Semiconductors -- August 1998
Volume 32, Issue 8, pp. 799-916
In memory of Boris Timofeevich Kolomiets (on the 90th anniversary of his birth)
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Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors
A. V. Kolobov and K. Tanaka
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Transport properties of microcrystalline silicon at low temperatures
J.-H. Zhou, S. D. Baranovskii, S. Yamasaki, K. Ikuta, M. Kondo, A. Matsuda, and K. Tanaka
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Synthesis and properties of Ge–Sb–S: NdCl3 glasses
B. Frumarová, P. Nemec, M. Frumar, and J. Oswald
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Laser-induced anisotropic absorbtion, reflection, and scattering of light in chalcogenide glassy semiconductors
V. M. Lyubin and M. L. Klebanov
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Recombination in hydrogenated amorphous silicon
K. V. Koughia, E. I. Terukov, and V. Fuhs
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Modification of the electron spectrum and vibrational properties of amorphous carbon by copper doping
V. I. Ivanov-Omskii and É. A. Smorgonskaya
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Phase transitions occurring in glassy chalcogenide semiconductors induced by electric field or laser pulses
É. A. Lebedev and K. D. Tséndin
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Modeling of hypervalent configurations, valence alternation pairs, deformed structure, and properties of a-S and a-As2S3
S. A. Dembovskii, A. S. Zyubin, and F. V. Grigor'ev
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Toward understanding the photoinduced changes in chalcogenide glasses
H. Fritzsche
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Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films
P. Nagels
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Photoinduced structural changes in amorphous semiconductors
K. Tanaka
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Chalcogenide glasses in optoelectronics
A. M. Andriesh
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Copper-induced changes in the properties of arsenic chalcogenides
N. Bollé, P. Hertogen, G. J. Adriaenssens, C. Sénémaud, and A. Gheorghiu-de La Rocque
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Doping in metal chalcogenide glasses
S. A. Girlani, B. Yan, and P. C. Taylor
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Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method
E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, and G. Weiser
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Ion implantation of porous gallium phosphide
V. V. Ushakov, V. A. Dravin, N. N. Mel'nik, T. V. Zavaritskaya, N. N. Loiko, V. A. Karavanskii, E. A. Konstantinova, and V. Yu. Timoshenko
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A model of photoinduced anisotropy in glassy semiconductors
E. V. Emel'yanova and V. I. Arkhipov
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Light absorption and photoluminescence of porous silicon
A. N. Obraztsov, V. A. Karavanskii, H. Okushi, and H. Watanabe
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Multimode nature and magnetophonon resonance of quaternary solid solutions of zinc, cadmium, and mercury tellurides
E. M. Sheregii, J. Cebulski, J. Polit, V. I. Ivanov-Omskii, and W. Gebicki
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Characteristic features of the interaction of porous silicon with heavy water
D. N. Goryachev, O. M. Sreseli, and G. Polisskii
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Information for Authors submitting papers for publication in the Russian language
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Erratum: Diffusion saturation of undoped hydrated amorphous silicon by tin impurity [Semiconductors 32, 263–266 (March 1998)]
A. N. Kabalbin, V. B. Neimash, V. M. Tsmots', and V. S. Shtym
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