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dc.descriptionSemiconductors -- July 1998 Volume 32, Issue 7, pp. 683-797 Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500–700 °C N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and R. Werner Full Text: PDF (458 kB) Features of the electrical compensation of bismuth impurities in PbSe S. A. Nemov, T. A. Gavrikova, V. A. Zykov, P. A. Osipov, and V. I. Proshin Full Text: PDF (56 kB) Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret'yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin Full Text: PDF (81 kB) Stabilization of the physical properties of CdxHg1 – xSe solid solutions doped with iron O. S. Romanyuk, S. Yu. Paranchich, L. D. Paranchich, and V. N. Makogonenko Full Text: PDF (95 kB) Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host S. D. Darchuk, L. A. Korovina, F. F. Sizov, T. Dietl, S. Kolesnik, and M. Sawicki Full Text: PDF (107 kB) Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt K. S. Zhuravlev, T. S. Shamirzaev, and N. A. Yakusheva Full Text: PDF (115 kB) Calculation of the energy levels of shallow acceptors in uniaxially strained germanium M. A. Odnoblyudov and V. M. Chistyakov Full Text: PDF (91 kB) Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors L. P. Kazakova and É. A. Lebedev Full Text: PDF (62 kB) Donorlike behavior of rare-earth impurities in PbTe G. T. Alekseeva, M. V. Vedernikov, E. A. Gurieva, P. P. Konstantinov, L. V. Prokof'eva, and Yu. I. Ravich Full Text: PDF (91 kB) Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level M. V. Alekseenko, A. G. Zabrodskii, and L. M. Shterengas Full Text: PDF (182 kB) Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown K. M. Jandieri and V. S. Kachlishvili Full Text: PDF (143 kB) Preparation and properties of GeS2 single crystals A. V. Golubkov, G. B. Dubrovskii, and A. I. Shelykh Full Text: PDF (42 kB) Photovoltaic effect in In/I–III–VI2-thin-film surface-barrier structures V. Yu. Rud', Yu. V. Rud', I. V. Bodnar', V. F. Gremenok, O. S. Obraztsova, and S. L. Sergeev-Nekrasov Full Text: PDF (69 kB) Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts A. N. Andreev, M. G. Rastegaeva, V. P. Rastegaev, and S. A. Reshanov Full Text: PDF (141 kB) Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices I. I. Reshina and R. Planel' Full Text: PDF (60 kB) Theoretical study of the threshold characteristics of InGaN multiquantum well lasers G. G. Zegrya and N. A. Gun'ko Full Text: PDF (143 kB) Modulation of optical absorption of GaAs/AlGaAs quantum wells in a transverse electric field L. E. Vorob'ev, E. A. Zibik, D. A. Firsov, V. A. Shalygin, O. N. Nashchekina, and I. I. Saidashev Full Text: PDF (74 kB) Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AlGaAs quantum wells L. E. Vorob'ev, I. E. Titkov, D. A. Firsov, V. A. Shalygin, A. A. Toropov, T. V. Shubina, V. N. Tulupenko, and E. Towe Full Text: PDF (113 kB) Light absorption in aperiodic PbS/C superlattices in an electric field S. F. Musikhin, V. I. Il'in, O. V. Rabizo, L. G. Bakueva, and L. V. Sharonova Full Text: PDF (43 kB) Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction V. P. Evtikhiev, V. E. Tokranov, A. K. Kryzhanovskii, A. M. Boiko, R. A. Suris, A. N. Titkov, A. Nakamura, and M. Ichida Full Text: PDF (595 kB) Scattering of hot electrons by neutral acceptors in GaAs/AlAs quantum well structures D. N. Mirlin, V. I. Perel', and I. I. Reshina Full Text: PDF (194 kB) Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon O. A. Golikova and V. Kh. Kudoyarova Full Text: PDF (74 kB) Effect of deposition and annealing conditions on the optical properties of amorphous silicon A. I. Mashin, A. V. Ershov, and D. A. Khokhlov Full Text: PDF (83 kB) Temperature dependence of the reverse current in Schottky barrier diodes P. A. Pipinis, A. K. Rimeika, and V. A. Lapeika Full Text: PDF (76 kB) Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p–n junctions V. B. Voronkov, E. G. Guk, V. A. Kozlov, M. Z. Shvarts, and V. B. Shuman Full Text: PDF (64 kB) Pulsed investigations of diode structures based on silicon-hydrogen films S. V. Belov and A. A. Lebedev Full Text: PDF (86 kB) Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. V. Lunev, A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, and P. S. Kop'ev Full Text: PDF (76 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 32en
dc.relation.ispartofseriesI. 07en
dc.titleSemiconductors V. 32, I. 07en

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