Semiconductors -- January 1998 Volume 32, Issue 1, pp. 1-115 The history and future of semiconductor heterostructures Zh. I. Alferov Full Text: PDF (1403 kB) Nonequilibrium segregation of phosphorus in the system silicon dioxide-silicon O. V. Aleksandrov and N. N. Afonin Full Text: PDF (92 kB) High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret'yakov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin Full Text: PDF (130 kB) Photoluminescence of cadmium telluride recrystallized by nanosecond pulsed laser irradiation V. N. Babentsov and N. I. Tarbaev Full Text: PDF (355 kB) Filling of dislocation levels in strong electric fields Z. A. Veliev Full Text: PDF (87 kB) Influence of the intensity of gamma irradiation on the photoluminescence of GaAs:Te V. I. Dubovik, V. A. Bogdanova, N. A. Davletkil'deev, N. A. Semikolenova, and O. A. Shutyak Full Text: PDF (67 kB) Optical characteristics of 1.18-eV luminescence band complexes in n-GaAs:Sn(Si): results of a photoluminescence study with polarized resonant excitation A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, T. Piotrowski, and J. Pultorak Full Text: PDF (165 kB) Intrinsic defect states in PbTe single-crystal films grown by laser-modulated epitaxy S. V. Plyatsko Full Text: PDF (99 kB) Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt K. S. Zhuravlev, T. S. Shamirzaev, and N. A. Yakusheva Full Text: PDF (111 kB) Effect of selenium on the galvanomagnetic properties of the diluted magnetic semiconductor Hg1 – xMnxTe1 – ySey V. A. Kulbachinskii, I. A. Churilov, P. D. Maryanchuk, and R. A. Lunin Full Text: PDF (82 kB) On C – V profiling near an isotypic heterojunction V. I. Zubkov, M. A. Melnik, and A. V. Solomonov Full Text: PDF (63 kB) Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin, and A. É. Yunovich Full Text: PDF (103 kB) Calculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contact S. Yu. Davydov, A. A. Lebedev, and S. K. Tikhonov Full Text: PDF (75 kB) Photoelectric properties of n-CdS/p-InP heterojunctions V. M. Botnaryuk, L. V. Gorchak, I. I. Diaconu, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (129 kB) Photoelectric properties of structures based on TlInS2 single crystals S. Iida, N. Mamedov, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (89 kB) Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects N. I. Bochkareva and A. V. Klochkov Full Text: PDF (137 kB) Commensurate and incommensurate indium phases on a (111)A InAs surface Yu. G. Galitsyn, V. G. Mansurov, I. I. Marahovka, and I. P. Petrenko Full Text: PDF (1180 kB) Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Chao Chen, P. S. Kop'ev, Zh. I. Alfërov, V. N. Petrov, G. É. Tsirlin, and D. Bimberg Full Text: PDF (283 kB) Exciton polaritons in long-period quantum-well structures M. R. Vladimirova, E. L. Ivchenko, and A. V. Kavokin Full Text: PDF (133 kB) Interimpurity light absorption in thin wires of III–V-type semiconductors A. P. Dzhotyan, É. M. Kazaryan, and A. S. Chirkinyan Full Text: PDF (113 kB) Characterization of GaAs/InxGa1 – xAs quantum-dot heterostructures by electrical and optical methods V. Ya. Aleshkin, D. M. Gaponova, S. A. Gusev, V. M. Danil'tsev, Z. F. Krasil'nik, A. V. Murel, L. V. Paramonov, D. G. Revin, O. I. Khrykin, and V. I. Shashkin Full Text: PDF (130 kB) Relaxation of light-induced metastable state of boron-doped p-type a-Si:H A. G. Kazanskii and E. V. Larina Full Text: PDF (79 kB) Relation between the optoelectronic parameters of amorphous hydrogenated silicon films deposited at high temperatures and their microstructure G. J. Adriaenssens, W. Grevendonk, and O. A. Golikova Full Text: PDF (47 kB) Generation in a microstrip-resonator-stabilized double-barrier resonant tunneling structure A. A. Beloushkin, Yu. A. Efimov, A. S. Ignat'ev, A. L. Karuzskii, V. N. Murzin, A. V. Perestoronin, G. K. Rasulova, A. M. Tskhovrebov, and E. G. Chizhevskii Full Text: PDF (79 kB)