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dc.date.accessioned2007-06-11T18:45:07Z
dc.date.available2007-06-11T18:45:07Z
dc.date.issued1997-12
dc.identifier.urihttp://hdl.handle.net/1951/41383
dc.descriptionSemiconductors -- December 1997 Volume 31, Issue 12, pp. 1217-1283 Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates N. N. Dymova, A. E. Kunitsyn, V. V. Chaldyshev, and A. V. Markov Full Text: PDF (88 kB) Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching T. Ya. Gorbach, S. V. Svechnikov, P. S. Smertenko, P. G. Tul'chinskii, A. V. Bondarenko, S. A. Volchek, A. M. Dorofeev, G. Masini, G. Maiello, S. La Monica, and A. Ferrari Full Text: PDF (85 kB) Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data A. N. Veis Full Text: PDF (79 kB) Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum A. M. Agal'tsov, V. S. Gorelik, and I. A. Rakhmatullaev Full Text: PDF (54 kB) Photoconductivity of sulfur-doped silicon near 10.6 µm Kh. B. Siyabekov and V. T. Tulanov Full Text: PDF (63 kB) Effect of different types of surface treatment on the photoelectric and optical properties of CdTe A. Baidullaeva, A. I. Vlasenko, and P. E. Mozol' Full Text: PDF (60 kB) Properties of p-PbTe (Ga) based diode structures B. A. Akimov, E. V. Bogdanov, V. A. Bogoyavlenskii, L. I. Ryabova, and V. I. Shtanov Full Text: PDF (82 kB) Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma K. S. Zhuravlev, V. A. Kolosanov, I. I. Marahovka, and M. Holland Full Text: PDF (69 kB) Photoluminescence of localized exitons in coherently strained ZnS–ZnSe/GaAs(001) quantum wells V. V. Tishchenko, N. V. Bondar, M. S. Brodyn, and A. V. Kovalenko Full Text: PDF (58 kB) Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures S. I. Pokutnii Full Text: PDF (124 kB) Metastability and relaxation processes in hydrogenated amorphous silicon B. G. Budaguan, A. A. Aivazov, M. N. Meitin, A. Yu. Sazonov, A. E. Berdnikov, and A. A. Popov Full Text: PDF (109 kB) Light-induced processes in a-Si:H films at elevated temperatures I. A. Kurova, É. V. Larina, N. N. Ormont, and D. V. Senashenko Full Text: PDF (75 kB) Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, V. V. Ryl'kov, and V. E. Sizov Full Text: PDF (129 kB) Kinetics of ion depolarization of Si–MOS structures in the linear voltage sweep regime A. G. Zhdan, E. I. Goldman, and G. V. Chucheva Full Text: PDF (140 kB) Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations L. E. Vorob'ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and V. N. Tulupenko Full Text: PDF (172 kB) Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields L. E. Vorob'ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and V. N. Tulupenko Full Text: PDF (131 kB)en
dc.format.extent1268173 bytes
dc.format.extent4376 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 31en
dc.relation.ispartofseriesI. 12en
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 31, I. 12en


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