Description
Semiconductors -- December 1997
Volume 31, Issue 12, pp. 1217-1283
Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
N. N. Dymova, A. E. Kunitsyn, V. V. Chaldyshev, and A. V. Markov
Full Text: PDF (88 kB)
Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching
T. Ya. Gorbach, S. V. Svechnikov, P. S. Smertenko, P. G. Tul'chinskii, A. V. Bondarenko, S. A. Volchek, A. M. Dorofeev, G. Masini, G. Maiello, S. La Monica, and A. Ferrari
Full Text: PDF (85 kB)
Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data
A. N. Veis
Full Text: PDF (79 kB)
Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum
A. M. Agal'tsov, V. S. Gorelik, and I. A. Rakhmatullaev
Full Text: PDF (54 kB)
Photoconductivity of sulfur-doped silicon near 10.6 µm
Kh. B. Siyabekov and V. T. Tulanov
Full Text: PDF (63 kB)
Effect of different types of surface treatment on the photoelectric and optical properties of CdTe
A. Baidullaeva, A. I. Vlasenko, and P. E. Mozol'
Full Text: PDF (60 kB)
Properties of p-PbTe (Ga) based diode structures
B. A. Akimov, E. V. Bogdanov, V. A. Bogoyavlenskii, L. I. Ryabova, and V. I. Shtanov
Full Text: PDF (82 kB)
Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma
K. S. Zhuravlev, V. A. Kolosanov, I. I. Marahovka, and M. Holland
Full Text: PDF (69 kB)
Photoluminescence of localized exitons in coherently strained ZnS–ZnSe/GaAs(001) quantum wells
V. V. Tishchenko, N. V. Bondar, M. S. Brodyn, and A. V. Kovalenko
Full Text: PDF (58 kB)
Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures
S. I. Pokutnii
Full Text: PDF (124 kB)
Metastability and relaxation processes in hydrogenated amorphous silicon
B. G. Budaguan, A. A. Aivazov, M. N. Meitin, A. Yu. Sazonov, A. E. Berdnikov, and A. A. Popov
Full Text: PDF (109 kB)
Light-induced processes in a-Si:H films at elevated temperatures
I. A. Kurova, É. V. Larina, N. N. Ormont, and D. V. Senashenko
Full Text: PDF (75 kB)
Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states
B. A. Aronzon, D. A. Bakaushin, A. S. Vedeneev, V. V. Ryl'kov, and V. E. Sizov
Full Text: PDF (129 kB)
Kinetics of ion depolarization of Si–MOS structures in the linear voltage sweep regime
A. G. Zhdan, E. I. Goldman, and G. V. Chucheva
Full Text: PDF (140 kB)
Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations
L. E. Vorob'ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and V. N. Tulupenko
Full Text: PDF (172 kB)
Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields
L. E. Vorob'ev, S. N. Danilov, Yu. V. Kochegarov, D. A. Firsov, and V. N. Tulupenko
Full Text: PDF (131 kB)
