Semiconductors -- November 1997 Volume 31, Issue 11, pp. 1101-1215 Anisotropic thermocouples article A. A. Snarskii, A. M. Pal'ti, and A. A. Ashcheulov Full Text: PDF (286 kB) Low-energy nonparabolicity and condenson states in In4Se3 crystals D. M. Bercha, L. Yu. Kharkhalis, A. I. Bercha, and M. Shnajder Full Text: PDF (153 kB) Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells V. E. Kudryashov, K. G. Zolin, A. N. Turkin, A. É. Yunovich, A. N. Kovalev, and F. I. Manyakhin Full Text: PDF (131 kB) Electron-structural metastability of cationic donor centers in GaAs D. E. Onopko, A. I. Ryskin, and N. T. Bagraev Full Text: PDF (92 kB) Optical properties of thin n-Pb1 – xSnxSe/BaF2 epitaxial layers in the plasmon–phonon interaction region A. A. Kopylov, V. A. Moshnikov, and A. N. Kholodilov Full Text: PDF (135 kB) Position of antimony impurity atoms in a PbTe lattice, determined by emission Mössbauer spectroscopy V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, N. N. Troitskaya, and S. I. Bondarevskii Full Text: PDF (47 kB) Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko Full Text: PDF (100 kB) Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt G. N. Ivanova, V. A. Kasiyan, and D. D. Nedeoglo Full Text: PDF (84 kB) Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors B. S. Sokolovskii and L. S. Monastyrskii Full Text: PDF (82 kB) Photoconductivity of CuInSe2 films V. Yu. Rud' and Yu. V. Rud' Full Text: PDF (62 kB) Relaxation properties of a metal–chalcogenide glassy semiconductor V. T. Avanesyan, V. A. Bordovskii, and R. A. Castro Full Text: PDF (42 kB) Electrical and photoelectric properties of an anisotypic Pb0.93Sn0.07Se/PbSe heterojunction T. A. Gavrikova and V. A. Zykov Full Text: PDF (90 kB) Excitonic electroluminescence of 6H-SiC p–n structures obtained by sublimation epitaxy A. A. Lebedev, N. K. Poletaev, and M. Z. doKarmo Full Text: PDF (63 kB) Passivation of GaAs in alcohol solutions of ammonium sulfide V. N. Bessolov, E. V. Konenkova, M. V. Lebedev, and D. R. T. Zahn Full Text: PDF (105 kB) Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave I. L. Drichko, A. M. D'yakonov, V. D. Kagan, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov Full Text: PDF (175 kB) Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures A. V. Guk, V. É. Kaminskii, V. G. Mokerov, Yu. V. Fedorov, and Yu. V. Khabarov Full Text: PDF (158 kB) Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot A. F. Polupanov, V. I. Galiev, and M. G. Novak Full Text: PDF (161 kB) Photoluminescence of porous gallium arsenide D. N. Goryachev and O. M. Sreseli Full Text: PDF (68 kB) Polarization memory in an oxidized porous SiC layer A. M. Danishevskii, A. Yu. Rogachev, V. B. Shuman, and E. G. Guk Full Text: PDF (86 kB) Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3µm T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (89 kB) Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers N. A. Gun'ko, G. G. Zegrya, N. V. Zotova, Z. N. Sokolova, N. M. Stus', and V. B. Khalfin Full Text: PDF (296 kB) Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors P. A. Ivanov, O. I. Kon'kov, V. N. Panteleev, and T. P. Samsonova Full Text: PDF (64 kB)