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dc.descriptionSemiconductors -- June 1997 Volume 31, Issue 6, pp. 545-649 Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates V. I. Kozlovskii, A. S. Artemov, Yu. V. Korostelin, A. B. Krysa, P. V. Shapkin, P. A. Trubenko, E. M. Dianov, and E. A. Shcherbakov Full Text: PDF (930 kB) Mesoscopic effects in the hopping conductivity region of macroscopic quasi-two-dimensional systems B. A. Aronzon, A. S. Vedeneev, and V. V. Ryl'kov Full Text: PDF (106 kB) Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures I. A. Andreev, E. V. Kunitsyna, V. M. Lantratov, T. V. L'vova, M. P. Mikhailova, and Yu. P. Yakovlev Full Text: PDF (70 kB) Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation N. L. Bazhenov, G. G. Zegrya, M. P. Mikhailova, K. D. Moiseev, V. A. Smirnov,, O. Yu. Solov'eva, and Yu. P. Yakovlev Full Text: PDF (79 kB) Influence of charge carriers on tuning in InAsSb lasers T. N. Danilova, O. I. Evseenko, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov,, V. V. Sherstnev, and Yu. P. Yakovlev Full Text: PDF (89 kB) Depolarization and photoionization effects in quantum wells A. G. Petrov and A. Ya. Shik Full Text: PDF (97 kB) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. Yu. Egorov,, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov,, V. M. Ustinov, A. F. Tsatsul'nikov, Zh. I. Alferov, J. Böhrer, and D. Bimberg Full Text: PDF (242 kB) Formation of carrier generation centers in pure Si upon interaction with fast ions A. M. Ivanov and N. B. Strokan Full Text: PDF (107 kB) Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals I. G. Kuleev and G. L. Shtrapenin Full Text: PDF (107 kB) Drift-induced production of concentration gratings in an electron-hole plasma in a high-frequency electric field V. L. Borblik Full Text: PDF (138 kB) Thermal-gradient concentration in a bipolar semiconductor with phonon drag of charge carriers A. M. Konin Full Text: PDF (77 kB) Light-emitting diodes based on a metal-insulator-semiconductor structure V. B. Katok, M. I. Panfilov, and G. E. Chaika Full Text: PDF (51 kB) Recombination model of the diffusion of zinc in GaAs N. N. Grigor'ev and T. A. Kudykina Full Text: PDF (109 kB) Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov Full Text: PDF (83 kB) Influence of impurity germanium on the properties of sulfur centers in silicon M. S. Yunusov, M. Karimov, B. L. Oksengendler, and A. Yusupov Full Text: PDF (77 kB) Possibility of enhancing a photorefractive hologram using negative differential conductivity Yu. V. Miklyaev Full Text: PDF (74 kB) Dielectric constant and ac conductivity of semi-insulating Cd1 – xMnxTe semiconductors P. W. Zukowski, A. Rodzik, and Yu. A. Shostak Full Text: PDF (106 kB) Anomalous distribution of iron atoms following the simultaneous implantation of Co+ and Fe+ ions in silicon G. G. Gumarov, V. Yu. Petukhov, V. A. Zhikharev, V. A. Shustov, and I. B. Khaibullin Full Text: PDF (67 kB) Features of radiation-induced defect formation in p-type Si M. S. Yunusov, M. Karimov, M. Alikulov, A. Akhmadaliev, B. L. Oksengendler, and S. S. Sabirov Full Text: PDF (67 kB) Schottky barrier breakdown in Si stimulated by exciton drift in a nonuniform electric field at 4.2 K A. M. Musaev Full Text: PDF (73 kB) Influence of ytterbium on radiation-induced defect formation in silicon F. M. Talipov Full Text: PDF (45 kB) Photoluminescence of SiO2 layers implanted with Si+ ions and annealed in a pulsed regime G. A. Kachurin, I. E. Tyschenko, K. S. Zhuravlev, N. A. Pazdnikov, V. A. Volodin, A. K. Gutakovskii, A. F. Leier, W. Skorupa, and R. A. Yankov Full Text: PDF (826 kB) Quantum efficiency of Schottky photodiodes near the long-wavelength edge V. G. Ivanov, V. I. Panasenkov, and G. V. Ivanov Full Text: PDF (112 kB) The photoconductivity of CdxHg1 – xTe (x = 0.2 – 0.3) with an aluminum thin-film coating É. Yu. Salaev, É. K. Guseinov, N. D. Ismailov, and Atesh Tezer Full Text: PDF (117 kB) Temperature dependence of the photoluminescence of porous silicon P. K. Kashkarov, E. A. Konstantinova, S. A. Petrova, V. Yu. Timoshenko, and A. É. Yunovich Full Text: PDF (67 kB) Use of a low-temperature emitter in investigating the spectral characteristics of infrared photodetectors V. V. Vasil'ev, Yu. P. Mashukov, and V. N. Ovsyuk Full Text: PDF (81 kB) Laser-stimulated displacement of the p – n junction boundary in direct-gap GaAsP structures G. A. Sukach Full Text: PDF (84 kB) Capacitive Methods of Semiconductor Purity Control L. S. Berman Full Text: PDF (15 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 31en
dc.relation.ispartofseriesI. 06en
dc.titleSemiconductors V. 31, I. 06en

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