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dc.descriptionSemiconductors -- April 1997 Volume 31, Issue 4, pp. 321-432 Diffusion of boron and phosphorus in silicon during high-temperature ion implantation G. V. Gadiyak Full Text: PDF (170 kB) Effect of electron and neutron bombardment on the orange luminescence spectra of not specially doped and copper-doped cadmium sulfide single crystals G. E. Davidyuk, V. S. Manzhara, N. S. Bogdanyuk, A. P. Shavarova, and V. V. Bulatetskii Full Text: PDF (74 kB) Effect of lateral transport of photoinduced charge carriers in a heterostructure with a two-dimensional electron gas V. A. Sablikov, O. A. Ryabushkin, and S. V. Polyakov Full Text: PDF (183 kB) The electrical conductivity of polycrystalline SnO2(Cu) films and their sensitivity to hydrogen sulfide B. A. Akimov, A. V. Albul, A. M. Gas'kov, V. Yu. Il'in, M. N. Rumyantseva, L. I. Ryabova, and M. Labeau Full Text: PDF (122 kB) Characteristic features of the accumulation of vacancy- and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents I. I. Kolkovskii and V. V. Luk'yanitsa Full Text: PDF (131 kB) Solid solution InxGa1 – xAsySbzP1 – y – z: A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy N. A. Charykov, A. M. Litvak, M. P. Mikhailova, K. D. Moiseev, and Yu. P. Yakovlev Full Text: PDF (150 kB) Interband magnetooptic absorption line shape in bismuth S. V. Brovko, A. A. Zaitsev, K. G. Ivanov, and O. V. Kondakov Full Text: PDF (140 kB) Intense photoluminescence of porous layers of SiC films grown on silicon substrates A. M. Danishevskii, V. B. Shuman, E. G. Guk, and A. Yu. Rogachev Full Text: PDF (134 kB) Injection enhancement of photocurrent in polycrystalline silicon p+–n–n+ structures R. Aliev Full Text: PDF (64 kB) Particle scattering times on one-dimensional potential barriers N. L. Chuprikov Full Text: PDF (113 kB) Transverse stability of an impact-ionization front in a Si p+ – n – n+ structure A. M. Minarskii and P. B. Rodin Full Text: PDF (128 kB) Deep level transient spectroscopy under conditions of current-carrier exchange between two allowed bands A. A. Lebedev Full Text: PDF (101 kB) Effect of inhomogeneities of Bi2T3 crystals on the transverse Nernst–Ettingshausen effect M. K. Zhitinskaya, S. A. Nemov, and T. E. Svechnikova Full Text: PDF (83 kB) Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation A. M. Georgievskii, V. A. Solov'ev, B. S. Ryvkin, N. A. Strugov, E. Yu. Kotel'nikov, V. E. Tokranov, and A. Ya. Shik Full Text: PDF (167 kB) Electron localization in sound absorption oscillations in the quantum Hall effect regime I. L. Drichko, A. M. D'yakonov, A. M. Kreshchuk, T. A. Polyanskaya, I. G. Savel'ev, I. Yu. Smirnov, and A. V. Suslov Full Text: PDF (194 kB) Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells A. M. Kreshchuk, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev Full Text: PDF (246 kB) Hall effect on inertial electrons in semiconductors V. I. Kadushkin Full Text: PDF (76 kB) Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask L. B. Proékt, M. A. Kaliteevskii, V. B. Kantor, D. A. Piotrovskii,, M. A. Sinitsyn, and B. S. Yavich Full Text: PDF (113 kB) Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06 T. Yu. Allen, T. A. Polyanskaya, A. A. Kopylov, and A. A. Shakmaev Full Text: PDF (85 kB) Propagation of a surface acoustic wave in a layered system containing a two-dimensional conducting layer V. D. Kagan Full Text: PDF (103 kB) Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, S. V. Zaitsev, N. Yu. Gordeev, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg Full Text: PDF (107 kB) Neutron-activation analysis of the impurity composition of gallium arsenide based semiconductor structures A. G. Dutov, V. A. Komar, S. V. Shiryaev, and L. A. Smakhtin Full Text: PDF (78 kB) Effect of laser radiation on the electronic density of states of an interface L. N. Vozmilova, V. I. Gaman, V. M. Kalygina, A. V. Panin, and T. P. Smirnova Full Text: PDF (176 kB) Radiative cooling under the conditions of magnetoconcentration A. I. Liptuga, V. K. Malyutenko, V. I. Pipa, and L. V. Levash Full Text: PDF (328 kB) Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n – n+-GaAs structures (M=Pt, Cr, W) I. B. Ermolovich, V. V. Milenin, R. V. Konakova, L. N. Primenko, I. V. Prokopenko, and V. L. Gromashevskii Full Text: PDF (150 kB) Transitory switching-on of microplasmas at subthreshold voltages V. N. Dobrovol'skii, I. E. Pal'tsev, and A. V. Romanov Full Text: PDF (58 kB)en
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dc.publisherMAIK “Nauka/Interperiodica”.en
dc.relation.ispartofseriesV. 31en
dc.relation.ispartofseriesI. 04en
dc.titleSemiconductors V. 31, I. 04en

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