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Semiconductors V. 31, I. 03

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dc.date.accessioned 2007-06-11T18:31:50Z
dc.date.available 2007-06-11T18:31:50Z
dc.date.issued 1997-03
dc.identifier.uri http://hdl.handle.net/1951/41373
dc.description Semiconductors -- March 1997 Volume 31, Issue 3, pp. 207-320 Modeling the hydrogen distribution accompanying electron injection in SiO2 films in strong electric fields G. V. Gadiyak Full Text: PDF (154 kB) Effect of electron irradiation on the electrical properties of n-type Pb1 – xSnxTe (x ~= 2) alloys E. P. Skipetrov and A. N. Nekrasova Full Text: PDF (85 kB) Transport phenomena in n-MnxHg1 – xTe/Cd0.96Zn0.04Te epitaxial films G. V. Beketov, A. E. Belyaev, S. A. Vitusevich, S. V. Kavertsev, and S. M. Komirenko Full Text: PDF (81 kB) Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1 – xSix heterostructures Yu. G. Arapov, N. A. Gorodilov, V. N. Neverov, G. I. Kharus, and N. G. Shelushinina Full Text: PDF (169 kB) Defects in intrinsic and pseudodoped amorphous hydrated silicon O. A. Golikova Full Text: PDF (85 kB) Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates A. N. Andreev, N. Yu. Smirnova, A. S. Tregubova, M. P. Shcheglov, and V. E. Chelnokov Full Text: PDF (7762 kB) Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface D. A. Pavlov, A. F. Khokhlov, D. V. Shungurov, and V. G. Shengurov Full Text: PDF (292 kB) Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity M. V. Cheremisin Full Text: PDF (205 kB) Binding energy of shallow donors in asymmetrical systems of quantum wells V. I. Belyavskii, M. V. Gol'dfarb, S. V. Shevtsov, and Yu. V. Kopaev Full Text: PDF (127 kB) Nonlinear conductivity and current–voltage characteristics of two-dimensional semiconductor superlattices Yu. A. Romanov and E. V. Demidov Full Text: PDF (108 kB) Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation V. M. Émeksuzyan, G. N. Kamaev, G. N. Feofanov, and V. V. Bolotov Full Text: PDF (127 kB) Shubnikov–de Haas oscillations in HgSe and HgSe under hydrostatic pressure É. A. Neifel'd, K. M. Demchuk, G. I. Kharus, A. É. Bubnova, L. I. Domanskaya, G. D. Shtrapenin, and S. Yu. Paranchich Full Text: PDF (106 kB) Thermoelectric figure of merit of monopolar semiconductors with finite dimensions V. S. Zakordonets and G. N. Logvinov Full Text: PDF (67 kB) Galvanomagnetic phenomena in p-Hg1 – xMnxTe solid solutions R. I. Bashirov, R. R. Bashirov, V. A. Elizarov, and A. Yu. Mollaev Full Text: PDF (82 kB) Lattice vibrations in CuInSe2 crystals N. N. Syrbu, M. Bogdanash, and V. E. Tezlevan Full Text: PDF (130 kB) Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure E. S. Itskevich, L. M. Kashirskaya, and V. F. Kraidenov Full Text: PDF (75 kB) Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation A. M. Myasnikov, V. I. Obodnikov, V. G. Seryapin, E. G. Tishkovskii, B. I. Fomin, and E. I. Cherepov Full Text: PDF (61 kB) Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te S. V. Kavertsev and A. E. Belyaev Full Text: PDF (62 kB) Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H A. G. Kazanskii Full Text: PDF (58 kB) Recombination mechanisms in doped n-type Hg1 – xCdxTe crystals and properties of diffusion p+ – n junctions based on them V. V. Teterkin, S. Ya. Stochanskii, and F. F. Sizov Full Text: PDF (95 kB) Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures E. V. Demidov Full Text: PDF (86 kB) Auger recombination in strained quantum wells A. D. Andreev and G. G. Zegrya Full Text: PDF (152 kB) Luminescence of porous silicon in the infrared spectral region at room temperature G. Polisskii, F. Koch, O. M. Sreseli, and A. V. Andrianov Full Text: PDF (75 kB) Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide A. V. Kalameitsev, D. A. Romanov, A. P. Kovchavtsev, G. L. Kuryshev, K. O. Postnikov, and I. M. Subbotin Full Text: PDF (150 kB) Luminescence of copper-aluminum diselenide V. A. Savchuk, B. V. Korzun, N. A. Sobolev, and L. A. Makovetskaya Full Text: PDF (72 kB) The electrical activity of isoelectronic germanium impurities in lead chalcogenides V. F. Masterov, F. S. Nasredinov, S. A. Nemov, P. P. Seregin, A. V. Ermolaev, and S. M. Irkaev Full Text: PDF (47 kB) en
dc.format.extent 8755166 bytes
dc.format.extent 6853 bytes
dc.format.mimetype application/pdf
dc.format.mimetype text/html
dc.language.iso en_US en
dc.publisher MAIK “Nauka/Interperiodica”. en
dc.relation.ispartofseries V. 31 en
dc.relation.ispartofseries I. 03 en
dc.subject Semiconductors en
dc.subject.lcsh Physics en
dc.title Semiconductors V. 31, I. 03 en


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