Browsing by Author "Medikonda, Manasa"

Now showing items 1-3 of 3

    • Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2 and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes 

      Consiglio, Steven; Tapily, Kandabara; Clark, Robert D.; Hasegawa, Toshio; Amano, Fumitaka; Leusink, Gert J.; Jordan-Sweet, Jean; Vasić, Relja; Medikonda, Manasa; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      In this study, the authors examined the effects of different annealing schemes on crystallinity in atomic layer deposition (ALD) grown Ti-containing metal gates and ultrathin ALD HfO2 high-k dielectric layers, and corresponding ...

    • Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1-xGex/Si fin structures using x-ray reciprocal space maps 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Fronheiser, Jody; Kamineni, Vimal; Wormington, Matthew; Matney, Kevin; Adam, Thomas N.; Karapetrova, Evguenia; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      Characterization of the periodicity and strain state of an array of lithographically patterned silicon and silicon-germanium alloy on silicon fins using reciprocal space mapping of Bragg diffraction peaks is presented. ...

    • Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) 

      Medikonda, Manasa; Muthinti, Gangadhara R.; Vasić, Relja; Adam, Thomas N.; Reznicek, Alexander; Wormington, Matthew; Malladi, Girish; Kim, Yihwan; Huang, Yi-Chiau; Diebold, Alain C. (Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2014)
      The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x=0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering ...