Now showing items 1-1 of 1

  • Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide 

    Kerr, A. J.; Chagarov, E.; Gu, S.; Kaufman-Osborn, T.; Madisetti, S.; Wu, J.; Asbeck, P. M.; Oktyabrsky, S.; Kummel, A. C. (Journal of Chemical Physics, 2014)
    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFTMD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer ...