Semiconductors -- May 1999 Volume 33, Issue 5, pp. 483-593 REVIEW Induced photopleochroism in semiconductors Review F. P. Kesamanly, V. Yu. Rud', and Yu. V. Rud' Full Text: PDF (434 kB) ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects M. Yu. Barabanenkov, A. V. Leonov, V. N. Mordkovich, and N. M. Omel'yanovskaya Full Text: PDF (79 kB) Effect of the irradiation intensity on the efficiency of the production radiation defects in n- and p-type Si crystals T. A. Pagava and Z. V. Basheleishvili Full Text: PDF (42 kB) Spontaneously forming periodic composition-modulated InGaAsP structures N. A. Bert, L. S. Vavilova, I. P. Ipatova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, A. A. Sitnikova, I. S. Tarasov, and V. A. Shchukin Full Text: PDF (432 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Absorption of infrared radiation by free charge carriers in n-type Cd1–xZnxTe A. I. Belogorokhov, A. G. Belov, V. M. Lakeenkov, N. A. Smirnova, and L. I. Belogorokhova Full Text: PDF (71 kB) Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them G. A. Il'chuk, N. A. Ukrainets, V. I. Ivanov-Omskii, Yu. V. Rud', and V. Yu. Rud' Full Text: PDF (123 kB) Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions I. E. Tyschenko, V. A. Volodin, L. Rebohle, M. Voelskov, and V. Skorupa Full Text: PDF (139 kB) Slow photoconductivity relaxation due to radiation defects in p-type Si S. E. Mal'khanov Full Text: PDF (44 kB) Dependence of the properties of Cd1 – xZnxTe crystals on the type of intrinsic point defect formed by oxygen N. K. Morozova, I. A. Karetnikov, V. V. Blinov, V. K. Komar, V. G. Galstan, and V. S. Zimogorskii Full Text: PDF (124 kB) Low-temperature anomalies exhibited by the photoelectromagnetic effect in p-type CdxHg1–xTe S. G. Gasan-zade, M. V. Strikha, and G. A. Shepelskii Full Text: PDF (111 kB) The effect of fields due to charge centers at random locations in a semiconductor crystal on the electronic structure of neutral acceptors and on the polarization of luminescence generated by -acceptor transitions E. B. Osipov, O. V. Voronov, N. O. Sorokina, and B. V. Borisov Full Text: PDF (89 kB) The effect of intense laser light on the absorption-edge region of the spectrum of a CdCr2Se4 ferromagnetic semiconductor L. L. Golik and Z. É. Kun'kova Full Text: PDF (76 kB) SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES Saturated vertical drift velocity of electrons in silicon carbide polytypes V. I. Sankin and A. A. Lepneva Full Text: PDF (74 kB) Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts A. A. Verevkin, N. G. Ptitsina, K. V. Smirnov, B. M. Voronov, G. N. Gol'tsman, E. M. Gershenson, and K. S. Yngvesson Full Text: PDF (78 kB) Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers A. V. Ankudinov, V. P. Evtikhiev, V. E. Tokranov, V. P. Ulin, and A. N. Titkov Full Text: PDF (657 kB) LOW-DIMENSIONAL SYSTEMS Spectrum and electron-phonon interaction in a medium with a cylindrical quantum wire N. V. Tkach and V. P. Zharkoi Full Text: PDF (117 kB) Electron and hole spectra in a superlattice of cylindrical quantum wires V. M. Golovach, G. G. Zegrya, A. M. Makhanets, I. V. Pronishin, and N. V. Tkach Full Text: PDF (123 kB) AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS Vibrational spectra of erbium- and copper-modified hydrogenated amorphous carbon V. I. Ivanov-Omskii, A. A. Andreev, and G. S. Frolova Full Text: PDF (74 kB) PHYSICS OF SEMICONDUCTOR DEVICES Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskii Full Text: PDF (83 kB) D'yakonov–Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel M. V. Cheremisin and G. G. Samsonidze Full Text: PDF (165 kB) InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, V. M. Ustinov, I. L. Krestnikov, A. V. Lunev, A. V. Sakharov, B. V. Volovik, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alfërov, and D. Bimberg Full Text: PDF (90 kB) Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry V. P. Evtikhiev, E. Yu. Kotel'nikov, I. V. Kudryashov, V. E. Tokranov, and N. N. Faleev Full Text: PDF (191 kB)